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Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs., , , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer., , , , , , , , , и 10 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks., , , , , , , , , и 5 other автор(ы). Microelectron. Reliab., 47 (4-5): 518-520 (2007)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 131-134. IEEE, (2016)Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach., , , , , , , , , и 7 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)Assessment of SiGe quantum well transistors for DRAM peripheral applications., , , , , , , , , и 1 other автор(ы). ICICDT, стр. 1-4. IEEE, (2015)Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , и 8 other автор(ы). ESSDERC, стр. 190-193. IEEE, (2013)Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 242-245. IEEE, (2012)Analysis of BTI in 300 mm integrated dual-gate WS2 FETs., , , , , , и . DRC, стр. 1-2. IEEE, (2022)