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ESD protection diodes in optical interposer technology., , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , и . IRPS, стр. 2. IEEE, (2015)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , и . IMW, стр. 1-4. IEEE, (2021)Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation., , , , , и . IRPS, стр. 1-7. IEEE, (2020)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , и . IRPS, стр. 5. IEEE, (2018)Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology., , , , , , , , , и . ISQED, стр. 473-479. IEEE, (2014)A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation., , , , , , и . Microelectron. Reliab., 41 (3): 437-443 (2001)RF ESD protection strategies - the design and performance trade-off challenges., , , , , , , , , и 5 other автор(ы). CICC, стр. 489-496. IEEE, (2005)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 218-225. IEEE, (2015)