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A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs., , , , , , , , , and 1 other author(s). VLSI Circuits, page 48-. IEEE, (2019)UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems., , , , , , , , , and 9 other author(s). IEEE J. Solid State Circuits, 43 (1): 292-299 (2008)Subthreshold Operation of CAAC-IGZO FPGA by Overdriving of Programmable Routing Switch and Programmable Power Switch., , , , , , , , , and 2 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 25 (1): 125-138 (2017)A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology., , , , , , , , , and 4 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 23 (3): 422-434 (2015)Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor., , , , , , , , , and 5 other author(s). IEEE J. Solid State Circuits, 47 (9): 2258-2265 (2012)Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS., , , , , , , , , and 6 other author(s). VLSI Circuits, page 1-2. IEEE, (2016)16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method., , , , , , , , , and 7 other author(s). ISSCC, page 1-3. IEEE, (2015)Liquid crystal display device and method for manufacturing the same, , and . (20040305)Normally-Off Computing for Crystalline Oxide Semiconductor-Based Multicontext FPGA Capable of Fine-Grained Power Gating on Programmable Logic Element With Nonvolatile Shadow Register., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 50 (9): 2199-2211 (2015)Embedded SRAM and Cortex-M0 Core Using a 60-nm Crystalline Oxide Semiconductor., , , , , , , , , and 5 other author(s). IEEE Micro, 34 (6): 42-53 (2014)