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Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors.

, , , , and . IEEE Des. Test Comput., 29 (5): 18-26 (2012)

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An Integrated Modeling Paradigm of Circuit Reliability for 65nm CMOS Technology., , , , , and . CICC, page 511-514. IEEE, (2007)A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors., , , , , and . IRPS, page 10. IEEE, (2022)Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique., , , , , and . IRPS, page 1-6. IEEE, (2021)Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors., , , , and . IEEE Des. Test Comput., 29 (5): 18-26 (2012)Current Crowding Impact on Electromigration in Al Interconnects., , , and . IRPS, page 1-6. IEEE, (2019)Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs., , , , , and . IRPS, page 1-5. IEEE, (2019)ACE: A robust variability and aging sensor for high-k/metal gate SoC., , , , and . ESSDERC, page 182-185. IEEE, (2013)Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process., , , , and . IRPS, page 1-6. IEEE, (2019)Impact of negative bias temperature instability on digital circuit reliability., , , , , , and . Microelectron. Reliab., 45 (1): 31-38 (2005)Cross-Modal Health State Estimation., , , , , and . ACM Multimedia, page 1993-2002. ACM, (2018)