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A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput., , , , , , , , , and 25 other author(s). IEEE J. Solid State Circuits, 42 (1): 219-232 (2007)A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput., , , , , , , , , and 25 other author(s). ISSCC, page 507-516. IEEE, (2006)A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology., , , , , , , , , and 32 other author(s). ISSCC, page 198-199. IEEE, (2011)Blind Channel Shortening for Block Transmission of Correlated Signals., and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 91-A (11): 3095-3103 (2008)A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology., , , , , , , , , and 32 other author(s). IEEE J. Solid State Circuits, 47 (1): 75-84 (2012)7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology., , , , , , , , , and 17 other author(s). ISSCC, page 1-3. IEEE, (2015)A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology., , , , , , , , , and 17 other author(s). IEEE J. Solid State Circuits, 51 (1): 196-203 (2016)