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Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.

, , , , , , , , , и . ESSDERC, стр. 275-278. IEEE, (2021)

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Attilio Celio

Walter Belmonte

Fabien Belmonte

Attilio Gambardella

Arturo Belmonte-Pool

 

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Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications., , , , , , , , , и . ESSDERC, стр. 275-278. IEEE, (2021)Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays., , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM., , , , , и . ESSDERC, стр. 114-117. IEEE, (2015)Conductive filaments multiplicity as a variability factor in CBRAM., , , , , , и . IRPS, стр. 11. IEEE, (2015)Process-induced charging damage in IGZO nTFTs., , , , , , , , и . IRPS, стр. 1-8. IEEE, (2021)Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament., , , , , , и . NVMTS, стр. 1-5. IEEE, (2017)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm., , , , , , , , , и 14 other автор(ы). VLSI Technology and Circuits, стр. 292-293. IEEE, (2022)Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT., , , , , , , , , и 1 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control., , , , , , , , , и 10 other автор(ы). ICICDT, стр. 88. IEEE, (2022)