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Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models., , , , , , and . Microelectron. J., 44 (2): 80-85 (2013)Modeling the subthreshold region of OTFTs., , , and . CCE, page 1-4. IEEE, (2011)3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs., , , and . ESSDERC, page 258-261. IEEE, (2014)Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation., , , , , , , , and . ESSDERC, page 456-459. IEEE, (2016)Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor., and . ISCAS, page 193-196. IEEE, (1994)Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs., , , , , , and . MIXDES, page 127-131. IEEE, (2017)Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs., , and . International Conference on Computational Science (4), volume 3994 of Lecture Notes in Computer Science, page 607-614. Springer, (2006)Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors., , , , , , and . CCE, page 1-4. IEEE, (2016)Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors., , , , , , , , , and . MIXDES, page 33-39. IEEE, (2022)Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States., , , , , , , and . MIXDES, page 45-50. IEEE, (2022)