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A 2.6 mW/Gbps 12.5 Gbps RX With 8-Tap Switched-Capacitor DFE in 32 nm CMOS., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 47 (4): 897-910 (2012)Design Techniques for High-Speed Multi-Level Viterbi Detectors and Trellis-Coded-Modulation Decoders., , , , , , , , , and 3 other author(s). IEEE Trans. Circuits Syst. I Regul. Pap., 65-I (10): 3529-3542 (2018)A 24-to-72GS/s 8b time-interleaved SAR ADC with 2.0-to-3.3pJ/conversion and >30dB SNDR at nyquist in 14nm CMOS FinFET., , , , , , , , , and . ISSCC, page 358-360. IEEE, (2018)A 5.7mW/Gb/s 24-to-240Ω 1.6Gb/s thin-oxide DDR transmitter with 1.9-to-7.6V/ns clock-feathering slew-rate control in 22nm CMOS., , , , , , , , and . ISSCC, page 310-311. IEEE, (2013)23.6 A 30Gb/s 0.8pJ/b 14nm FinFET receiver data-path., , , , , , , , , and 1 other author(s). ISSCC, page 408-409. IEEE, (2016)A 60-Gb/s 1.9-pJ/bit NRZ Optical Receiver With Low-Latency Digital CDR in 14-nm CMOS FinFET., , , , , , , , , and 7 other author(s). IEEE J. Solid State Circuits, 53 (4): 1227-1237 (2018)A 64-Gb/s 1.4-pJ/b NRZ Optical Receiver Data-Path in 14-nm CMOS FinFET., , , , , , , , , and 7 other author(s). IEEE J. Solid State Circuits, 52 (12): 3458-3473 (2017)A low-noise CMOS instrumentation amplifier for thermoelectric infrared detectors., and . IEEE J. Solid State Circuits, 32 (7): 968-976 (1997)22.1 A 90GS/s 8b 667mW 64× interleaved SAR ADC in 32nm digital SOI CMOS., , , , , , , , , and . ISSCC, page 378-379. IEEE, (2014)A 25Gb/s CDR in 90nm CMOS for High-Density Interconnects., , , , , and . ISSCC, page 1266-1275. IEEE, (2006)