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Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs.

, and . ITC, page 443-451. IEEE Computer Society, (1986)

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Multiple-parameter CMOS IC testing with increased sensitivity for I_DDQ., , , , , and . ITC, page 1051-1059. IEEE Computer Society, (2000)Defect Oriented Fault Diagnosis for Semiconductor Memories using Charge Analysis: Theory and Experiments., , , , , and . VTS, page 286-291. IEEE Computer Society, (2001)Increased CMOS IC stuck-at fault coverage with reduced I DDQ test sets., , , and . ITC, page 427-435. IEEE Computer Society, (1990)Zero defects or zero stuck-at faults-CMOS IC process improvement with IDDQ., , and . ITC, page 255-256. IEEE Computer Society, (1990)Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs., and . ITC, page 443-451. IEEE Computer Society, (1986)Multiple-parameter CMOS IC testing with increased sensitivity for IDDQ., , , and . IEEE Trans. Very Large Scale Integr. Syst., 11 (5): 863-870 (2003)IDDQ Design and Test Advantages Propel Industry., and . IEEE Des. Test Comput., 12 (2): 40-41 (1995)Test and Reliability: Partners in IC Manufacturing, Part 2., , , and . IEEE Des. Test Comput., 16 (4): 66-73 (1999)Parametric Failures in CMOS ICs - A Defect-Based Analysis., , , and . ITC, page 90-99. IEEE Computer Society, (2002)Burn-in Temperature Projections for Deep Sub-micron Technologies., , , , and . ITC, page 95-104. IEEE Computer Society, (2003)