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ESD protection diodes in optical interposer technology., , , , , , and . ICICDT, page 1-4. IEEE, (2015)Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology., , , , , , , , and . ESSDERC, page 265-268. IEEE, (2022)Processing active devices on Si interposer and impact on cost., , , , , , , , , and . 3DIC, page TS11.2.1-TS11.2.4. IEEE, (2015)ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology., , , , and . ESSDERC, page 194-197. IEEE, (2018)Scaling CMOS beyond Si FinFET: an analog/RF perspective., , , , , , , , , and 4 other author(s). ESSDERC, page 158-161. IEEE, (2018)Evaluation of Nanosheet and Forksheet Width Modulation for Digital IC Design in the Sub-3-nm Era., , , , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 30 (10): 1497-1506 (2022)ESD characterisation of a-IGZO TFTs on Si and foil substrates., , , , , , , , and . ESSDERC, page 276-279. IEEE, (2017)Active-lite interposer for 2.5 & 3D integration., , , , , , , , , and 5 other author(s). VLSIC, page 222-. IEEE, (2015)ESD characterization of planar InGaAs devices., , , , , , , , , and 7 other author(s). IRPS, page 3. IEEE, (2015)Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies., , , , and . CICC, page 1-4. IEEE, (2013)