From post

A cost-effective technique for extending the low-frequency range of a microwave noise parameter test set.

, , и . IEEE Trans. Instrumentation and Measurement, 48 (4): 830-834 (1999)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Efficient Time Diversity Evaluation for Direct Tire Pressure Monitoring System., , , , и . VTC Spring, стр. 1-5. IEEE, (2010)An Empirical Study of RF Link for Wireless Automotive Passive Entry System., , , , и . VTC Spring, стр. 1-5. IEEE, (2010)Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications., , , , , и . IRPS, стр. 1-5. IEEE, (2023)Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging., , , , , , , , , и . Microelectron. Reliab., (2017)Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies., , , , и . Microelectron. Reliab., 55 (9-10): 1714-1718 (2015)Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements., , , , , , , , , и 4 other автор(ы). Microelectron. Reliab., 53 (9-11): 1491-1495 (2013)Transmission quality evaluation of Tire Pressure Monitoring Systems., , , , и . ITSC, стр. 1-5. IEEE, (2009)A cost-effective technique for extending the low-frequency range of a microwave noise parameter test set., , и . IEEE Trans. Instrumentation and Measurement, 48 (4): 830-834 (1999)Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test., , , , , , , , , и 1 other автор(ы). Microelectron. Reliab., 52 (9-10): 2184-2187 (2012)