Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending.

Y. Liu, H. Yu, G. Hiblot, A. Kruv, M. Schaekers, N. Horiguchi, D. Velenis, and I. Wolf. IRPS, page 1-5. IEEE, (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Ingo Gaspard

Gaspard Many

Jean-Gaspard Mudiso Mbâ Mundla

Other publications of authors with the same name

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime.G. Hiblot, Q. Rafhay, F. Boeuf, and G. Ghibaudo. ESSDERC, page 286-289. IEEE, (2014)Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending.Y. Liu, H. Yu, G. Hiblot, A. Kruv, M. Schaekers, N. Horiguchi, D. Velenis, and I. Wolf. IRPS, page 1-5. IEEE, (2019)Comparative Analysis of the Degradation Mechanisms in Logic and I/O FinFET Devices Induced by Plasma Damage.G. Hiblot, Y. Liu, G. Hellings, and G. der Plas. IRPS, page 1-5. IEEE, (2019)Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails.A. Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, H. Arimura, M. Stucchi, A. Keersgieter, M. Hosseini and 34 other author(s). VLSI Technology and Circuits, page 284-285. IEEE, (2022)Process-induced charging damage in IGZO nTFTs.G. Hiblot, N. Rassoul, L. Teugels, K. Devriendt, A. Chasin, M. van Setten, A. Belmonte, R. Delhougne, and G. Kar. IRPS, page 1-8. IEEE, (2021)Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR.G. Hiblot, Q. Rafhay, L. Gaben, G. Ghibaudo, and F. Boeuf. ESSDERC, page 242-245. IEEE, (2015)Towards Chip-Package-System Co-optimization of Thermally-limited System-On-Chips (SOCs).S. Mishra, S. Venkateswarlu, B. Vermeersch, M. Brunion, M. Lofrano, D. Abdi, H. Oprins, D. Biswas, O. Zografos, G. Hiblot and 6 other author(s). IRPS, page 1-7. IEEE, (2023)NPN Si/SiGe memory selector with non-linearity>105 and ON-current>6MA/cm2.G. Hiblot, T. Ravsher, R. Loo, B. Ramana, N. Franchina-Vergel, A. Fantini, S. Sharifi, N. Bazzazian, K. Wostyn, L. Labbate and 2 other author(s). ESSDERC, page 164-167. IEEE, (2023)PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology.S. Yang, P. Schuddinck, M. Bardon, Y. Xiang, A. Veloso, B. Chan, G. Mirabelli, G. Hiblot, G. Hellings, and J. Ryckaert. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Impact of short-channel effects on velocity overshoot in MOSFET.G. Hiblot, Q. Rafhay, F. Boeuf, and G. Ghibaudo. NEWCAS, page 1-4. IEEE, (2015)

BibSonomy

Disambiguation of "Hiblot, Gaspard"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending.

Please choose a person to relate this publication to

Ingo Gaspard

Gaspard Many

Jean-Gaspard Mudiso Mbâ Mundla

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hiblot, Gaspard"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending.

Please choose a person to relate this publication to

Ingo Gaspard

Gaspard Many

Jean-Gaspard Mudiso Mbâ Mundla

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending.