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Disambiguation of "Linder, Barry P."

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Dependence of Post-Breakdown Conduction on Gate Oxide Thickness.

, , and . Microelectron. Reliab., 42 (9-11): 1481-1484 (2002)

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Georg Barry

Boubakar Barry

Georg Barry

Sebastian Barry

James Barry

 

Other publications of authors with the same name

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery., , , and . IRPS, page 1-5. IEEE, (2019)Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD., , , and . IRPS, page 1-5. IEEE, (2019)Influence and model of gate oxide breakdown on CMOS inverters., , , , and . Microelectron. Reliab., 43 (9-11): 1439-1444 (2003)Dependence of Post-Breakdown Conduction on Gate Oxide Thickness., , and . Microelectron. Reliab., 42 (9-11): 1481-1484 (2002)A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation., , , , , , , and . IRPS, page 2. IEEE, (2022)Analyzing path delays for accelerated testing of logic chips., , , , , , , and . IRPS, page 6. IEEE, (2015)Improving and optimizing reliability in future technologies with high-κ dielectrics., , , and . VLSI-DAT, page 1-4. IEEE, (2013)Electromigration characteristics of power grid like structures., , , , and . IRPS, page 4. IEEE, (2018)Analysis of the effect of the gate oxide breakdown on SRAM stability., , , , , , , , , and . Microelectron. Reliab., 42 (9-11): 1445-1448 (2002)Estimating transistor channel temperature using time-resolved and time-integrated NIR emission., , , , , and . IRPS, page 6. IEEE, (2018)