Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Detecting Transistor Defects in Medical Systems Using a Multi Model Ensemble of Convolutional Neural Networks., , , and . IEEE BigData, page 4731-4737. IEEE, (2021)Scaling CMOS beyond Si FinFET: an analog/RF perspective., , , , , , , , , and 4 other author(s). ESSDERC, page 158-161. IEEE, (2018)Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks., , , , , , , , , and 2 other author(s). ESSDERC, page 242-245. IEEE, (2012)Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks., , , , , and . Microelectron. Reliab., 47 (4-5): 489-496 (2007)Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm., , , , , , , , , and 1 other author(s). Adv. Intell. Syst., (January 2023)Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies., , , , , , , , , and 10 other author(s). IRPS, page 1-6. IEEE, (2021)Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications., , , , , , , , , and . ESSDERC, page 275-278. IEEE, (2021)Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs., , , , , , , , , and 1 other author(s). ESSDERC, page 330-333. IEEE, (2012)Isolation of nanowires made on bulk wafers by ground plane doping., , , , , and . ESSDERC, page 300-303. IEEE, (2017)