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1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS., , , , , , , , , и 6 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS., , , , , , , , , и 6 other автор(ы). VLSI Circuits, стр. 1-2. IEEE, (2016)Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor., , , , , , , , , и 5 other автор(ы). IEEE J. Solid State Circuits, 47 (9): 2258-2265 (2012)16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 1-3. IEEE, (2015)A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor., , , , , , , , , и 8 other автор(ы). VLSIC, стр. 1-2. IEEE, (2014)Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure., , , , , , , , , и 15 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Soft- and Hard-Error Radiation Reliability of 228 KB $3T+1C$ Oxide Semiconductor Memory., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-6. IEEE, (2023)Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating., , , , , , , , , и 14 other автор(ы). COOL Chips, стр. 1-3. IEEE Computer Society, (2014)Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide FET Integrated With 65-nm Si CMOS., , , , , , , , , и 4 other автор(ы). IEEE J. Solid State Circuits, 52 (4): 925-932 (2017)