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Crystallization Kinetics of Lead Halide Perovskite Film Monitored by In Situ Terahertz Spectroscopy

S. Park, A. Kim, J. Hong, J. Park, S. Lee, и Y. Ahn. The Journal of Physical Chemistry Letters, 8 (2): 401-406 (2017)PMID: 28050908.
DOI: 10.1021/acs.jpclett.6b02691

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Simon S Lee

Xavier Lee Lee

S Danischewski

S Ulrich

S Hilt

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Study on listmode OSEM reconstruction including image-space resolution recovery techniques for compton camera.S. Kim, J. Lee, M. Park, H. Seo, C. Kim, C. Lee, D. Lee, и S. Lee. ISBI, стр. 796-799. IEEE, (2010)The Physics of the B FactoriesA. Bevan, B. Golob, Th, S. Prell, B. Yabsley, K. Abe, H. Aihara, F. Anulli, N. Arnaud, T. Aushev и 2024 other автор(ы). The European Physical Journal C, (08.07.2014)Search for a light pseudoscalar Higgs boson in the dimuon decay channel in pp collisions at √s = 7 TeVS. Chatrchyan, V. Khachatryan, A. Sirunyan, A. Tumasyan, W. Adam, T. Bergauer, M. Dragicevic, J. Erö, C. Fabjan, M. Friedl и 2183 other автор(ы). Phys Rev Lett, 109 (12): 121801-121801 (сентября 2012)Reliability Characterization of HBM featuring $HK+MG$ Logic Chip with Multi-stacked DRAMs.S. Ha, S. Lee, G. Bae, D. Lee, S. Kim, B. Woo, N. Lee, Y. Lee, и S. Pae. IRPS, стр. 1-7. IEEE, (2023)Front-side and Back-side Power Delivery Network Guidelines for 2nm node High Perf Computing and Mobile SoC applications.J. Lee, J. Jeong, S. Lee, S. Lee, J. Lim, S. Song, S. Ekbote, N. Stevens-Yu, D. Greenlaw, и R. Baek. VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology.N. Lee, S. Lee, S. Kim, G. Kim, K. Lee, Y. Lee, Y. Hwang, H. Kim, и S. Pae. IRPS, стр. 6. IEEE, (2022)Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC.S. Lee, N. Lee, K. Lee, J. Kim, J. Jin, Y. Lee, Y. Hwang, H. Kim, и S. Pae. IRPS, стр. 1-4. IEEE, (2023)4.1 A 39GHz-Band CMOS 16-Channel Phased-Array Transceiver IC with a Companion Dual-Stream IF Transceiver IC for 5G NR Base-Station Applications.H. Park, D. Kang, S. Lee, B. Park, K. Kim, J. Lee, Y. Aoki, Y. Yoon, S. Lee, D. Lee и 23 other автор(ы). ISSCC, стр. 76-78. IEEE, (2020)Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology.Y. Ji, H. Goo, J. Lim, S. Lee, S. Lee, T. Uemura, J. Park, S. Han, S. Shin, J. Lee и 13 other автор(ы). IRPS, стр. 1-3. IEEE, (2019)Search for a narrow $tt$ resonance in $pp$ collisions at $s=1.96\,\,TeV$V. Abazov, B. Abbott, B. Acharya, M. Adams, T. Adams, G. Alexeev, G. Alkhazov, A. Alton, G. Alverson, G. Alves и 399 other автор(ы). Phys. Rev. D, 85 (5): 051101 (марта 2012)

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