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Disambiguation of "Bae, Seung-Jun"

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23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices.

, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , and . ISSCC, page 394-395. IEEE, (2017)

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Jun-Sang Bae

Jung-Hun Seung

Soonil Bae

Jun Jun Lu

Han Bae

 

Other publications of authors with the same name

23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme., , , , , , , , , and 27 other author(s). ISSCC, page 390-391. IEEE, (2017)An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques., , , , , , , , , and 18 other author(s). IEEE J. Solid State Circuits, 56 (1): 212-224 (2021)A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s., , , , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 63-I (1): 122-133 (2016)A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking., , , , , , , , , and 39 other author(s). ISSCC, page 204-206. IEEE, (2018)A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW., , , , , , , , , and 19 other author(s). ISSCC, page 498-500. IEEE, (2011)An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion., , , , , , , , , and 14 other author(s). IEEE J. Solid State Circuits, 43 (1): 121-131 (2008)18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution., , , , , , , , , and 7 other author(s). ISSCC, page 314-315. IEEE, (2016)An on-chip TSV emulation using metal bar surrounded by metal ring to develop interface circuits., , , , and . ISOCC, page 192-195. IEEE, (2012)A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process., , , , , , , , , and 16 other author(s). VLSI Circuits, page 147-148. IEEE, (2018)25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3rd-Generation 10nm DRAM., , , , , , , , , and 24 other author(s). ISSCC, page 346-348. IEEE, (2021)