( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).

, , , , , и . IRPS, стр. 2. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Georg Barry

Boubakar Barry

Georg Barry

Sebastian Barry

James Barry

 

Другие публикации лиц с тем же именем

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery., , , и . IRPS, стр. 1-5. IEEE, (2019)Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD., , , и . IRPS, стр. 1-5. IEEE, (2019)Improving and optimizing reliability in future technologies with high-κ dielectrics., , , и . VLSI-DAT, стр. 1-4. IEEE, (2013)Electromigration characteristics of power grid like structures., , , , и . IRPS, стр. 4. IEEE, (2018)Analysis of the effect of the gate oxide breakdown on SRAM stability., , , , , , , , , и . Microelectron. Reliab., 42 (9-11): 1445-1448 (2002)Influence and model of gate oxide breakdown on CMOS inverters., , , , и . Microelectron. Reliab., 43 (9-11): 1439-1444 (2003)Dependence of Post-Breakdown Conduction on Gate Oxide Thickness., , и . Microelectron. Reliab., 42 (9-11): 1481-1484 (2002)A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation., , , , , , , и . IRPS, стр. 2. IEEE, (2022)Analyzing path delays for accelerated testing of logic chips., , , , , , , и . IRPS, стр. 6. IEEE, (2015)Circuit implications of gate oxide breakdown., , и . Microelectron. Reliab., 43 (8): 1193-1197 (2003)