Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking., , , , , , , , , and 29 other author(s). IEEE J. Solid State Circuits, 54 (1): 197-209 (2019)18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution., , , , , , , , , and 7 other author(s). ISSCC, page 314-315. IEEE, (2016)25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation., , , , , , , , , and 16 other author(s). ISSCC, page 430-431. IEEE, (2014)A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction., , , , , , , , , and 20 other author(s). ISSCC, page 434-435. IEEE, (2010)22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process., , , , , , , , , and 29 other author(s). ISSCC, page 382-384. IEEE, (2020)Detecting abnormal behavior of automatic test equipment using autoencoder with event log data., , , , , , , and . Comput. Ind. Eng., (September 2023)A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction., , , , , , , , , and 20 other author(s). IEEE J. Solid State Circuits, 46 (1): 107-118 (2011)A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process., , , , , , , , , and 37 other author(s). ISSCC, page 206-208. IEEE, (2018)A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking., , , , , , , , , and 39 other author(s). ISSCC, page 204-206. IEEE, (2018)A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW., , , , , , , , , and 19 other author(s). ISSCC, page 498-500. IEEE, (2011)