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CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities., , , , , , , , , и 3 other автор(ы). ICICDT, стр. 1-4. IEEE, (2021)A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-5. IEEE, (2021)Beyond-Si materials and devices for more Moore and more than Moore applications., , , , , , , , , и 16 other автор(ы). ICICDT, стр. 1-5. IEEE, (2016)Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer., , , , , , , , , и 4 other автор(ы). ESSDERC, стр. 384-387. IEEE, (2022)On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices., , , , , , , , и . IRPS, стр. 1-8. IEEE, (2021)Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications., , , , , , , и . IRPS, стр. 11. IEEE, (2022)Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-8. IEEE, (2020)A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs., , , , , , , , и . ESSDERC, стр. 152-155. IEEE, (2023)The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices., , , , , , , , , и 2 other автор(ы). IRPS, стр. 5. IEEE, (2015)ESD characterization of planar InGaAs devices., , , , , , , , , и 7 other автор(ы). IRPS, стр. 3. IEEE, (2015)