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A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.

D. Linten, X. Sun, G. Carchon, W. Jeamsaksiri, A. Mercha, J. Ramos, S. Jenei, L. Aspemyr, A. Scholten, P. Wambacq, S. Decoutere, S. Donnay, and W. Raedt. CICC, page 701-704. IEEE, (2004)

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Lies Decoutere

Stefaan Bergé

Stefaan Haspeslagh

Stefaan Lecleir

Stefaan De Neve

Other publications of authors with the same name

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS.D. Linten, S. Thijs, M. Natarajan, P. Wambacq, W. Jeamsaksiri, J. Ramos, A. Mercha, S. Jenei, S. Donnay, and S. Decoutere. IEEE J. Solid State Circuits, 40 (7): 1434-1442 (2005)GaN-based HEMTs tested under high temperature storage test.D. Marcon, X. Kang, J. Viaene, M. Hove, P. Srivastava, S. Decoutere, R. Mertens, and G. Borghs. Microelectron. Reliab., 51 (9-11): 1717-1720 (2011)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.T. Wu, D. Marcon, B. Jaeger, M. Hove, B. Bakeroot, S. Stoffels, G. Groeseneken, S. Decoutere, and R. Roelofs. IRPS, page 6. IEEE, (2015)Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges.S. Decoutere, P. Wambacq, V. Subramanian, J. Borremans, and A. Mercha. CICC, page 679-686. IEEE, (2006)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, T. Wu, M. Hove, D. Marcon, S. Stoffels, S. Decoutere, and E. Zanoni. Microelectron. Reliab., (2016)Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A. Tallarico, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., (2017)Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.D. Favero, C. Santi, K. Mukherjee, K. Geens, M. Borga, B. Bakeroot, S. You, S. Decoutere, G. Meneghesso, E. Zanoni and 1 other author(s). IRPS, page 20-1. IEEE, (2022)Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.M. Millesimo, B. Bakeroot, M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna, and A. Tallarico. IRPS, page 10. IEEE, (2022)High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.D. Favero, A. Cavaliere, C. Santi, M. Borga, W. Filho, K. Geens, B. Bakeroot, S. Decoutere, G. Meneghesso, E. Zanoni and 1 other author(s). IRPS, page 1-6. IEEE, (2023)

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Disambiguation of "Decoutere, Stefaan"

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A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.

Please choose a person to relate this publication to

Lies Decoutere

Stefaan Bergé

Stefaan Haspeslagh

Stefaan Lecleir

Stefaan De Neve

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Decoutere, Stefaan"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.

Please choose a person to relate this publication to

Lies Decoutere

Stefaan Bergé

Stefaan Haspeslagh

Stefaan Lecleir

Stefaan De Neve

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.